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SOLID STATE DEVICES, INC.
14701 Firestone Blvd * La Mirada, Ca 90638 Phone: (562) 404-7855 * Fax: (562) 404-1773
SFF75N10M SFF75N10Z
75 AMP 100 VOLTS 0.025 N-CHANNEL POWER MOSFET
TO-254 (M) TO-254Z (Z)
DESIGNER'S DATA SHEET
FEATURES:
* * * * * * * * * * * Rugged construction with poly silicon gate low RDS (on) and high transconductance Excellent high temperature stability Very fast switching speed Fast recovery and superior dv/dt performance Increased reverse energy capability Low input and transfer capacitance for easy paralleling Ceramic seals for improved hermeticity Hermetically sealed package TX, TXV and Space Level screening available Replaces: IXTH75N10 Types
MAXIMUM RATINGS CHARACTERISTIC
Drain to Source Voltage Gate to Source Voltage Continuous Drain Current Operating and Storage Temperature Thermal Resistance, Junction to Case Total Device Dissipation @ TC = 25 C @ TC = 55oC
o
SYMBOL VDS V GS ID Top & Tstg R 0JC PD
VALUE 100 + 20 56 1/ -55 to +150 0.83 150 114
UNIT Volts Volts Amps
o
C
o
C/W
Watts
Repetitive Avalanche Energy CASE OUTLINE: TO-254 (Sufix M) Pin Out: Pin 1: Drain Pin 2: Source Pin 3: Gate
O.149 .139 .800 .790 .545 .535 .500 MIN
EAR
30
mJ
.155 .145
PIN 3
.545 .535
PIN 2 PIN 1
.305 .295
CASE OUTLINE: TO-254Z (Sufix Z) Pin Out: Pin 1: Drain Pin 2: Source Pin 3: Gate
2x O.150 .140 2x .140 .125 .545 .535 .555 .500 2x .275 .255
PIN 3
2x .155 .145
3x O.045 .035
1.090 .820 .545 1.050 .790 .535
PIN 2
.305 .295
.675.010
PIN 1
3x .045 .035
.260 .240
.155 .140
SUFFIX: Z
.050 .040
.285 .265
SUFFIX: M
.260 .240 .055 .035
2x .275 .255
.155 .135 2x .190 .150
.170 MIN
SUFFIX: MD
SUFFIX: MU
2x .190 .150
.170 MIN
SUFFIX: ZD
SUFFIX: ZU
2x .190 .150
Available with Glass or Ceramic Seals. Contact Factory for details.
NOTE: All specifications are subject to change without notification. SCDs for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: F00153F
SFF75N10M SFF75N10Z
SOLID STATE DEVICES, INC.
14701 Firestone Blvd * La Mirada, Ca 90638 Phone: (562) 404-7855 * Fax: (562) 404-1773
ELECTRICAL CHARACTERISTICS @ TJ =25oC (Unless Otherwise Specified) RATING
Drain to Source Breakdown Voltage
(VGS =0 V, ID = 250A) SYMBOL MIN TYP MAX UNIT
BVDSS
100 75 2 25 -
-
0.025 0.030 4.0 250 1000 +200 -200 260 70 160 40 100 120 80 1.75 200 -
V
Drain to Source on State Resistance
(VGS = 10 V)
ID = 37.5A ID = 75 A
RDS(on) ID(on) VGS(th) gfs IDSS
A V
(VDS > ID(on) x RDS(on) Max, VGS = 10 V) (VDS = VGS, ID = 4mA)
On State Drain Current Gate Threshold Voltage
30 160 16 50 30 35 100 40 1.3 120 4500 1600 800
Forward Transconductance
(VDS > ID(on) X RDS (on) Max, IDS=50% rated ID)
Smho A
nA
Zero Gate Voltage Drain Current
(VDS = max rated voltage, VGS = 0 V) (VDS = 80% rated VDS, VGS = 0V, TA = 125oC)
Gate to Source Leakage Forward Gate to Source Leakage Reverse Total Gate Charge Gate to Source Charge Gate to Drain Charge Turn on Delay Time Rise Time Turn off DelayTime Fall Time Diode Forvard Voltage
(IS = rated ID, VGS = 0V, TJ = 25oC)
At rated VGS VGS = 10 V 50% rated VDS 50% rated ID
VDD =50% rated VDS 50% rated ID RG = 6.2 VGS = 10V
IGSS Qg Qgs Qgd td (on) tr td (off) tf VSD
nC
nsec
V nsec
Diode Reverse Recovery Time Reverse Recovery Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance
TJ =25 C IF = 10A di/dt = 100A/sec VGS =0 Volts VDS =25 Volts f =1 MHz
o
trr QRR Ciss Coss Crss
pF
NOTES:
1/ Maximum current limited by package, die rated at 75A.
NOTE: All specifications are subject to change without notification. SCDs for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: F00153F

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